碳化硅器件制作关键技术与工艺集成

碳化硅器件制作关键技术与工艺集成

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摘要：碳化硅(Silicon Carbide, 简称SiC)作为一种宽禁带半导体材料，不但击穿电场强度高、热稳定性好、还具有载流子饱和漂移速度高、热导率高等特点，在高温、高频、大功率器件和集成电路制造领域有着广阔的应用前景。本文综述了SiC器件制作过程中关键工艺研究的最新进展，如掺杂、刻蚀、氧化以及欧姆接触，介绍了器件中结终端技术的应用与发展，最后从工艺集成的角度分析了器件制作过程中热学兼容性、力学兼容性以及异质兼容等问题。

关键词：碳化硅；器件工艺；结终端技术；工艺集成

Abstract: Silicon Carbide (SiC) has outstanding properties such as high saturated electron drift velocity, high electric breakdown field and high thermal conductivity, and is a very promising wide band gap semiconductor material to fabricate high temperature, high power and high frequency semiconductor devices.In this paper, research and development of SiC processes are reviewed, such as doping, etching, oxidation and ohmic contact formation. Application and development of junction termination extension is introduced. Finally, for the process integration, the thermal compatibility, mechanical compatibility andheterogeneouscompatibility issueare discussed.

Keywords: Silicon Carbide; process; Junction Termination Extension; Process Integration