学习入门
芯片制造工艺问答011：ODR pattern density对STI CMP有何影响?
Ans ODR density愈高，CMP的etch
rate会愈快，且ODR density也与STI density相关(STI density高，OD
density就低，相对地ODR density也要增加)Polish amount simulation equation by E2CMP (KA) =
[OD_ mask_field_ratio x (1- ODR_mask_field
芯片制造工艺问答008：何谓STI? Typical process flow?
Ans STI 为Shallow Trench Isolation的简称在0.25
um制程之后，STI是标准的绝缘隔离制程。以下为0.25 UM LOGIC
Technology STI process 的简述PAD OXIDE (920C, 110A) ,因SIN与SI间的应力很大，需要一层OXIDE做为缓冲。SIN D
芯片制造工艺问答012：Pre-Clean的目的为何? 目前共有几种Pre-Clean recipe存在FAB内? 个别的目的有何不同?
Ans Pre-Clean 一般指 Pre furnace/RTP clean.Presently active Pre-clean have 22 recipes; while
dilute APM 1 recipe(see attach file: clean.xls) Pre-clean 为SPM,APM,HPM,HF 依个别需求调整使用时间之clean process, SPM is fo
芯片制造工艺问答015：STI蚀刻后需检查什么地方以确保蚀刻正常? 这些项目在密集区何疏散区有何不同?
Ans 检查trench
edge, SIN AEI, at high pattern density region, STI profile is more steep,
profile deeper, SIN AEI smaller; at lower density region, STI profile less
steep, SIN AEI larger. 需检查Test
pattern
芯片制造工艺问答017：黄光区曝光机共有几种机型? 他们各别有什么任务? 试列表比较其特性?
Ans FAB5 PHO area have 8 EQ model (the information
should be updated according to E3PHO) as attached table:I- line stepper: Default lithographerI- line scanner: for better uniformity and
larger field
