最通俗易懂的光刻机原理介绍
光刻机，是现代光学工业之花，是半导体行业中的核心技术。可能有很多人都无法切身理解光刻机的重要地位，光刻机，是制造芯片的机器，要是没有了光刻机，我们就没有办法造出芯片，自然也就不会有我们现在的手机、电脑了。光刻机是用于芯片制造的核心设备，按照用途可以分为用于生产芯片的光刻机、用于封装的光刻机和用于LED制造领域的投影光刻机。光刻机的核心原理就是一个透镜组，在精度上首先咱们有个概念：我们现在芯片的线条
芯片制造工艺
芯片制造工艺问答033：说明Gate oxide quality (integrity)如何量度? 解释不同方法的优缺点 (Vbd, Qbd, )
Ans Vbd: pattern 2000×2000um2, die no=72ea, Vbd>= 8V for oxidethickness 70A, Vbd>=12V for oxide thickness 115A. Vbd>=6.5V, pass orVbd<=2.5V, mode A failure, 2.5V < Vbd< 6.5V, B mo
芯片制造工艺问答035： Lot to lot, within lot wafer to wafer, within wafer, within field.
Ans (1) lot to lot :不同lot之间的差异性, due to EQ, material, environmental shift(2) within lot waferto wafer:同一个lot中,不同wafer之间的差异性, due to batch run conditional shift. E.g. Lensheating, CVD film thicknes
芯片制造工艺问答037：PHO recipe的Focus设定值往正"+"调整后PR profile会有何影响?
Ans positive: 往正调整会造成所谓的”削头”的情形,如下图所示 negative:往负调整会造成所谓的”解不开”的情形,如下图所示
芯片制造工艺问答019：ODR光罩和OD光罩有何关系? 试画图解释之.
Ans ODR之用途在于减少CMP时之loading effect. ODR和OD光罩之关系式如下: ODR(121)=(((120
sizing –0.4) sizing 0.4) sizing –0.2)if
OD< 0.4um OD (yellow color) will be regarded as
芯片制造工艺问答036：PHO Overlay shift的原因及现象有哪些? 其中有多少种可以经由给机台补偿改善?
Ans (1) phenomenon:translation, rotation and magnitude, trapezoid, tilt (2) reason: as belowtabler 平移 旋转 水平 扭曲 倍率 X, Y large mean, small range
芯片制造工艺问答023：Sacrificial oxide (SAC oxide) 的目的为何?
Ans Sacrificial oxide was succeeded after SIN-Remove
of both LOCOS and STI process integration, the basic purposes are:Eliminate the defects caused by Kooi Effect (去除在field oxidation过程中, 所产生的white
rib
芯片制造工艺问答014：SiN CVD dep时炉管各部分的温度别控制在什么范围? 为什么如此?
Ans Temperature control divided to three zone:
bottom, center, upper, since gas flow from bottom, in order to compensate the
difference of gas concentration, B-zon
芯片制造工艺问答034：解释名词, PHO proximity effect, Swing effect, Exposure latitude, Best Focus.
Ans Pho proximity effect: (近接效应)Optical proximity effect is a nature result of the optical interference,diffraction effects. Because diffraction nature of incident lights, it’simpossible to elimin
