芯片制造工艺
芯片制造工艺问答015：STI蚀刻后需检查什么地方以确保蚀刻正常? 这些项目在密集区何疏散区有何不同?
Ans 检查trench
edge, SIN AEI, at high pattern density region, STI profile is more steep,
profile deeper, SIN AEI smaller; at lower density region, STI profile less
steep, SIN AEI larger. 需检查Test
pattern
芯片制造工艺问答020：总共有多少种光阻去除方式? 个别适用于何种情况?
Ans For FAB* stripping process, clear functions layout
are designed by machines & process layers, which are simply described as
below:(1)Dry ashing:M/CTotal recipe
No.Function designProcess laye
芯片制造工艺问答005：Well制程影响那些组件特性?
Ans Well表面的Dopant浓度会影响：Vt、Id、Source / Drain Capacitance and Field isolation。Well中部的Dopant浓度会影响：Punch-through。Source, Drain breakdown voltageWell底部的Dopant浓度会影响：Latch-up and Well junction breakdown volt
