芯片制造工艺问答030：Gate oxide 前制程B-Clean的目的为何? 其中的APM dip time会影响什么产品参数?
Ans Remove Si surface particles, metal Ion, organic,micro-roughness and native Oxide. --> Use 22220A,where SPM (CR) 1min to remove light organic, 100:1 HF 3min to remove any nativeoxide, and AP
