芯片制造工艺问答010：何谓ODR? 对产品有何影响?
Ans 如第8题的附图，在STI-HDP OXIDE Deposition后，Trench密集区的OXIDE多填入Trench内，而空旷区的OXIDE多在SIN之上，如此在后续的CMP制程将会引致不同的Polishing rate。因此用一个OD Reverse Tone(简单来看就是一个和OD Pattern相反的光罩)将空旷区的OXIDE曝开再由OXIDE ETCH将在SIN上的OXIDE吃掉
技术问答
芯片制造工艺问答012：Pre-Clean的目的为何? 目前共有几种Pre-Clean recipe存在FAB内? 个别的目的有何不同?
Ans Pre-Clean 一般指 Pre furnace/RTP clean.Presently active Pre-clean have 22 recipes; while
dilute APM 1 recipe(see attach file: clean.xls) Pre-clean 为SPM,APM,HPM,HF 依个别需求调整使用时间之clean process, SPM is fo
芯片制造工艺问答018： iline和DUV分别用什么样式的光阻? 试列表比较各光阻特性?
Ans To achieve sub-wavelength lithography results,
resist technology - like the phase shifting masks (PSMs), scanner optics and
inspection techniques - is pushed to its absolute limit. Most importantl
芯片制造工艺问答021：去除Si3N4时, 为何要在热磷酸之前加50:1 HF蚀刻? 此蚀刻时间太短有何影响?
Ans 50:1 HF is designed to remove any oxide above
SIN before H3PO4 strip. If HF etch time is too short, the oxide above SIN will
not completely removed, and SIN can not be stripped by H3PO4 and result
芯片制造工艺问答008：何谓STI? Typical process flow?
Ans STI 为Shallow Trench Isolation的简称在0.25
um制程之后，STI是标准的绝缘隔离制程。以下为0.25 UM LOGIC
Technology STI process 的简述PAD OXIDE (920C, 110A) ,因SIN与SI间的应力很大，需要一层OXIDE做为缓冲。SIN D
芯片制造工艺问答017：黄光区曝光机共有几种机型? 他们各别有什么任务? 试列表比较其特性?
Ans FAB5 PHO area have 8 EQ model (the information
should be updated according to E3PHO) as attached table:I- line stepper: Default lithographerI- line scanner: for better uniformity and
larger field
芯片制造工艺问答016：Active PHO (OD PHO)需检查什么以确保制程正确无误?
Ans 1. ADI
CD: because the low reflectivity property of SIN film, the CD uniformity within
a wafer is usually not so good, depends on PR thickness and SIN thickness, the
CD will be smaller in wa
芯片制造工艺问答015：STI蚀刻后需检查什么地方以确保蚀刻正常? 这些项目在密集区何疏散区有何不同?
Ans 检查trench
edge, SIN AEI, at high pattern density region, STI profile is more steep,
profile deeper, SIN AEI smaller; at lower density region, STI profile less
steep, SIN AEI larger. 需检查Test
pattern
芯片制造工艺问答020：总共有多少种光阻去除方式? 个别适用于何种情况?
Ans For FAB* stripping process, clear functions layout
are designed by machines & process layers, which are simply described as
below:(1)Dry ashing:M/CTotal recipe
No.Function designProcess laye
