芯片制造工艺问答003：目前常用的芯片阻值为何?
Ans 算成浓度值多少?P-type, r= 8~12Ω-cm, 10 ± 2 W-cm查表: 8Ω-cm à 1.68e15cm-3, 10Ω-cm à 1.34e15 cm-3, 12Ω-cm à 1.11e15 cm-3由
resistivity and concentration, the mobility can be derived:mn, mp =
electron and hole
问答
芯片制造工艺问答001：为何需要Start Oxide?
Ans For zero layer PHO process, before PHO PR
deposition, there need buffer oxide to isolate PR material on touch with Si. è Zero layer is designed by ASML stepper system.Preve
芯片制造工艺问答004：硅原子的Lattice constant为何? 换算成表面浓度, 体积浓度各是多少?
Ans Si Lattice Constant = 0.543 nm每个单位晶格内有 4 +
6*1/2 + 8*1/8 = 8 个原子体积浓度为
1/(5.43*10-8)3*8 = 5*1022cm-3 表面浓度与晶格方向有关，(1 0 0
)面的单位晶格内有 1 + 4*1/4 = 2 个原子(1 0 0 )面表面浓度为
