芯片制造工艺问答033：说明Gate oxide quality (integrity)如何量度? 解释不同方法的优缺点 (Vbd, Qbd, )
Ans Vbd: pattern 2000×2000um2, die no=72ea, Vbd>= 8V for oxidethickness 70A, Vbd>=12V for oxide thickness 115A. Vbd>=6.5V, pass orVbd<=2.5V, mode A failure, 2.5V < Vbd< 6.5V, B mo
